JAN1N5822US
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JAN1N5822US
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JAN1N5822US

Brand:Microchip
Model:JAN1N5822US
stock:42542
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥85.65
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing bulk
series Military, MIL-PRF-19500/620
Part status On sale
speed Rapid recovery=< 500ns,> 200mA(Io)
working temperature -
Encapsulation/Housing SQ-MELF,B
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
Supplier device packaging B,SQ-MELF
Diode type Schottky barrier
Voltage DC reverse (Vr) (maximum) 40 V
Current average rectification (Io) 3A
Voltage at different If - forward (Vf) 500 mV @ 3 A
Reverse recovery time (trr) -
Current - reverse leakage at different Vr -
Capacitance at different Vr and F -
Common problem
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